Datasheet > STWA65N023M9

STWA65N023M9

更新时间： 2023-12-20 18:45:49

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	445K
描述
N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO-247 long leads package

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STWA65N023M9 数据手册

STWA65N023M9

Datasheet

N-channel 650 V, 19.9 mΩ typ., 92 A MDmesh M9 Power MOSFET

in a TO‑247 long leads package

Features

DS(on)

max.

Order code

STWA65N023M9

650 V

23.0 mΩ

•

Worldwide best FOM R_DS(on)*Q_gamong silicon-based devices

Higher V_DSSrating

Higher dv/dt capability

TO-247 long leads

Excellent switching performance

Easy to drive

D(2, TAB)

100% avalanche tested

Applications

•

High efficiency switching applications

G(1)

Description

S(3)

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area. The silicon based M9 technology benefits from a multi-drain

manufacturing process which allows an enhanced device structure. The resulting

product has one of the lower on-resistance and reduced gate charge values, among

all silicon based fast switching super-junction Power MOSFETs, making it particularly

suitable for applications that require superior power density and outstanding

efficiency.

AM01475v1_noZen

Product status link

STWA65N023M9

Product summary

Order code

Marking

STWA65N023M9

65N023M9

Package

Packing

TO‑247 long leads

Tube

DS14036 - Rev 3 - July 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

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