Datasheet > STWA60N043DM9

STWA60N043DM9

更新时间： 2023-12-20 18:45:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	429K
描述
N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-247 long leads package

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STWA60N043DM9 数据手册

STWA60N043DM9

Datasheet

N-channel 600 V, 38 mΩ typ., 55 A MDmesh DM9 Power MOSFET

in a TO-247 long leads package

Features

DS(on)

max.

Order code

STWA60N043DM9

600 V

43 mΩ

55 A

•

Fast-recovery body diode

Worldwide best R_DS(on)per area among silicon-based fast recovery devices

Low gate charge, input capacitance and resistance

100% avalanche tested

TO-247 long leads

Extremely high dv/dt ruggedness

D(2, TAB)

Applications

•

Power supplies and converters

LLC resonant converter

G(1)

Description

S(3)

This N-channel Power MOSFET is based on the most innovative super-junction

MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very

low R_DS(on)per area coupled with a fast-recovery diode. The silicon-based DM9

technology benefits from a multi-drain manufacturing process which allows an

enhanced device structure. The fast-recovery diode featuring very low recovery

charge (Q_rr), time (t_rr) and R_DS(on)makes this fast-switching super-junction Power

MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS

phase-shift converters.

AM01475v1_noZen

Product status link

STWA60N043DM9

Product summary

Order code

STWA60N043DM9

Marking

Package

Packing

60N043DM9

TO-247 long leads

Tube

DS14232 - Rev 3 - August 2023

For further information contact your local STMicroelectronics sales office.

www.st.com

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