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STWA60N043DM9 PDF预览

STWA60N043DM9

更新时间: 2023-12-20 18:45:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 429K
描述
N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-247 long leads package

STWA60N043DM9 数据手册

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STWA60N043DM9  
Electrical characteristics (curves)  
2.1  
Electrical characteristics (curves)  
Figure 1. Safe operating area  
Figure 2. Maximum transient thermal impedance  
GADG300120231333SOA  
GADG300120231246ZTH  
ID  
(A)  
ZthJC  
(°C/W)  
IDM  
10 2  
10 1  
10 0  
10 -1  
duty=0.5  
tp=1µs  
10 -1  
4
tp=10µs  
3
RDS(on) max.  
0.05  
tp=100µs  
2
10 -2  
RthJC = 0.4 °C/W  
duty = ton / T  
tp=1ms  
V(BR)DSS  
tp=10ms  
10 -2  
10 -3  
TC = 25 °C  
TJ 150 °C  
single pulse  
ton  
Single pulse  
T
10 -3  
10 -1  
10 0  
10 1  
10 2  
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1  
VDS (V)  
tp (s)  
Figure 4. Typical transfer characteristics  
Figure 3. Typical output characteristics  
GADG090220221041TCH  
GADG090220221040OCH  
ID  
(A)  
ID  
(A)  
180  
150  
120  
90  
180  
150  
120  
90  
VGS = 9, 10 V  
8 V  
7 V  
VDS = 15 V  
60  
60  
30  
0
30  
0
6 V  
4
5
6
7
8
9
VGS (V)  
0
2
4
6
8
10  
12  
VDS (V)  
Figure 5. Typical gate charge characteristics  
Figure 6. Typical drain-source on-resistance  
GADG090220221041QVG  
GADG090220221042RID  
VDS  
(V)  
VGS  
(V)  
RDS(on)  
(mΩ)  
VDD = 480 V, ID = 28 A  
Qg  
VGS  
375  
300  
225  
150  
10  
8
41  
40  
39  
38  
Qgs  
Qgd  
VGS = 10 V  
6
4
75  
0
2
0
37  
36  
VDS  
40  
0
20  
60  
80  
Qg (nC)  
0
10  
20  
30  
40  
50  
ID (A)  
DS14232 - Rev 3  
page 5/12  
 

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