Datasheet > STWA60N043DM9

STWA60N043DM9

更新时间： 2023-12-20 18:45:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	429K
描述
N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET in a TO-247 long leads package

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STWA60N043DM9 数据手册

STWA60N043DM9

Electrical characteristics

Table 7. Source-drain diode

Test conditions

Symbol

Parameter

Source-drain current

Min.

Typ. Max. Unit

175

1.6

(1)

Source-drain current (pulsed)

Forward on voltage

SDM

(2)

= 0 V, I = 56 A

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

165

1.06

μC

= 56 A, di/dt = 100 A/μs, V = 60 V

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

RRM

= 56 A, di/dt = 100 A/μs,

= 60 V, T = 150 °C

215

2.2

μC

(see Figure 15. Test circuit for inductive

load switching and diode recovery times)

RRM

1. Pulse width is limited by safe operating area.

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

DS14232 - Rev 3

page 4/12

1 2 345 6 7...12

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