Datasheet > STWA63N65DM2

STWA63N65DM2

更新时间： 2024-11-26 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	324K
描述
N沟道650 V、0.042 Ohm典型值、60 A MDmesh DM2功率MOSFET，TO-247长引线封装

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STWA63N65DM2 数据手册

STWA63N65DM2

Datasheet

N-channel 650 V, 0.042 Ω typ., 60 A MDmesh™ DM2 Power MOSFET in a

TO-247 long leads package

Features

Order code

DS(on)

max.

TOT

STWA63N65DM2

650 V

0.050 Ω

60 A

446 W

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2)

Applications

G(1)

•

Switching applications

Description

S(3)

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

AM01476v1_No_tab

Product status link

STWA63N65DM2

Product summary

Order code

Marking

STWA63N65DM2

63N65DM2

Package

Packing

TO-247 long leads

Tube

DS12555 - Rev 1 - April 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...12

中文翻译

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