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STW18NM80 PDF预览

STW18NM80

更新时间: 2024-11-25 12:03:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
21页 1054K
描述
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET

STW18NM80 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-247包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.67Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:222544
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-247_2
Samacsys Released Date:2015-11-03 12:30:39Is Samacsys:N
雪崩能效等级(Eas):600 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (Abs) (ID):17 A
最大漏极电流 (ID):17 A最大漏源导通电阻:0.295 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-247
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):68 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STW18NM80 数据手册

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STB18NM80, STF18NM80,  
STP18NM80, STW18NM80  
N-channel 800 V, 0.25 Ω, 17 A, MDmesh™ Power MOSFET  
in D²PAK, TO-220FP, TO-220 and TO-247 packages  
Datasheet — production data  
Features  
RDS(on)  
max  
Order codes  
VDSS  
ID  
3
3
2
1
STB18NM80  
STF18NM80  
STP18NM80  
STW18NM80  
800 V  
800 V  
800 V  
800 V  
< 0.295 Ω  
< 0.295 Ω 17 A (1)  
17 A  
1
PAK  
TO-220FP  
< 0.295 Ω  
< 0.295 Ω  
17 A  
17 A  
1. Limited only by maximum temperature allowed  
3
3
2
2
1
1
100% avalanche tested  
TO-220  
Low input capacitance and gate charge  
Low gate input resistance  
TO-247  
Application  
Figure 1.  
Internal schematic diagram  
Switching applications  
$ꢅꢆꢇ  
Description  
These N-channel Power MOSFETs are  
developed using STMicroelectronics’  
revolutionary MDmesh™ technology, which  
associates the multiple drain process with the  
company's PowerMESH™ horizontal layout.  
These devices offer extremely low on-resistance,  
high dv/dt and excellent avalanche  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
characteristics. Utilizing ST’s proprietary strip  
technique, these Power MOSFETs boast an  
overall dynamic performance which is superior to  
similar products on the market.  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
PAK  
Packaging  
STB18NM80  
STF18NM80  
STP18NM80  
STW18NM80  
Tape and reel  
TO-220FP  
TO-220  
18NM80  
Tube  
TO-247  
May 2012  
Doc ID 15421 Rev 5  
1/21  
This is information on a product in full production.  
www.st.com  
21  

STW18NM80 替代型号

型号 品牌 替代类型 描述 数据表
STW26NM60N STMICROELECTRONICS

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STW45NM50 STMICROELECTRONICS

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