Datasheet > STPSC10C065-Y

STPSC10C065-Y

更新时间： 2024-09-28 14:57:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
9页	217K
描述
汽车用650 V、10 A碳化硅功率肖特基二极管

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STPSC10C065-Y 数据手册

STPSC10C065-Y

Datasheet

Automotive 650 V power Schottky silicon carbide diode

Features

NC(1)

A(3)

K(2)

•

AEC-Q101 qualified

No reverse recovery charge in application current range

Switching behavior independent of temperature

Recommended to PFC applications

PPAP capable

ECOPACK^®2 compliant component

•

I PAK

Description

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC10C065-Y will boost

performance in hard switching conditions.

Product status link

STPSC10C065-Y

Product summary

10 A

F(AV)

650 V

RRM

T (max.)

175 °C

DS12402 - Rev 2 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...9

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