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STPSC10H12-Y PDF预览

STPSC10H12-Y

更新时间: 2023-12-20 18:45:38
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
10页 528K
描述
汽车用1200 V、10 A碳化硅功率肖特基二极管

STPSC10H12-Y 数据手册

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STPSC10H12-Y  
Automotive grade 1200 V power Schottky silicon carbide diode  
Datasheet - production data  
Description  
K
A
The SiC diode, available in TO-220AC and  
D²PAK, is an ultrahigh performance power  
Schottky rectifier. It is manufactured using a  
silicon carbide substrate. The wide band-gap  
material allows the design of a low VF Schottky  
diode structure with a 1200 V rating. Due to the  
Schottky construction, no recovery is shown at  
turn-off and ringing patterns are negligible. The  
minimal capacitive turn-off behavior is  
K
K
A
A
NC  
K
independent of temperature.  
TO-220AC  
D²PAK  
Especially suited for use in PFC and secondary  
side applications, this ST SiC diode will boost the  
performance in hard switching conditions. This  
rectifier will enhance the performance of the  
targeted application. Its high forward surge  
capability ensures a good robustness during  
transient phases.  
Features  
AEC-Q101 qualified  
No or negligible reverse recovery  
Switching behavior independent of  
temperature  
Robust high voltage periphery  
PPAP capable  
Table 1: Device summary  
Symbol  
IF(AV)  
Value  
10 A  
Operating Tj from -40 °C to 175 °C  
ECOPACK®2 compliant  
VRRM  
1200 V  
175 °C  
1.35 V  
Tj(max.)  
VF(typ.)  
January 2017  
DocID029346 Rev 2  
1/10  
www.st.com  
This is information on a product in full production.  

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