Datasheet > STPSC20065DY

STPSC20065DY

更新时间： 2024-02-07 17:47:51

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Automotive 650 V power Schottky silicon carbide diode

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STPSC20065-Y

Automotive 650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is a high voltage power Schottky

diode. It is manufactured using a silicon carbide

substrate. The wide band gap material allows the

design of a Schottky diode structure with a 650 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Used as a freewheeling or output rectification

diode, this rectifier will enhance the performance

and form factor of the targeted power supply or

inverter.

DO-247

TO-220AC

Table 1: Device summary

Features

Symbol

I_F(AV)

Value

20 A



No reverse recovery charge in application

current range



Switching behavior independent of

temperature

Dedicated to PFC applications

High forward surge capability

ECOPACK®2 compliant component

AEC-Q101 qualified

V_RRM

650 V

175 °C

1.30 V

T_j(max.)

V_F(typ.)



PPAP capable

Operating T_jfrom -40 °C to 175 °C

May 2016

DocID029260 Rev 1

1/11

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...11

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