Datasheet > STPSC12065

STPSC12065

更新时间： 2023-12-20 18:45:46

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
14页	433K
描述
650 V 碳化硅功率肖特基二极管

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STPSC12065 数据手册

STPSC12065

Datasheet

650 V, 12 A power Schottky silicon carbide diode

Features

•

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating T_jfrom -40 °C to 175 °C

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant

D²PAK

D²PAK HV

Power efficient product

TO-220AC

Applications

•

DC/DC converter

High frequency inverter

Snubber

Boost PFC function

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of

a Schottky diode structure with a 650 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

Product label

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

Product status link

STPSC12065

Product summary

Symbol

Value

12 A

F(AV)

650 V

175 °C

1.30 V

RRM

T (max.)

V (typ.)

DS11623 - Rev 3 - March 2021

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...14

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