Datasheet > STPSC12065-Y

STPSC12065-Y

更新时间： 2023-12-20 18:45:49

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
15页	472K
描述
汽车级650V TO-220 D2PAK SiC功率肖特基二极管

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STPSC12065-Y 数据手册

STPSC12065-Y

Datasheet

Automotive 650 V, 12 A, silicon carbide power Schottky diode

Features

•

AEC-Q101 qualified

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

PPAP capable

D²PAK

TO-220AC

Operating T_jfrom -40 °C to 175 °C

V_RRMguaranteed from -40 to +175 °C

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top

coating)

D²PAK HV

•

ECOPACK^®2 compliant

Product label

Applications

•

On board charger

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of a

Schottky diode structure with a 650 V rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

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STPSC12065-Y

Especially suited for use in PFC applications, the STPSC12065-Y will boost

performance in hard switching conditions. Its high forward surge capability ensures

good robustness during transient phases.

Product summary

12 A

F(AV)

650 V

175 °C

1.30 V

RRM

T (max.)

V (typ.)

DS11624 - Rev 4 - December 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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