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STPSC12C065-Y PDF预览

STPSC12C065-Y

更新时间: 2023-12-20 18:44:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
8页 160K
描述
汽车用650 V、12 A碳化硅功率肖特基二极管

STPSC12C065-Y 数据手册

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STPSC12C065-Y  
Automotive 650 V power Schottky silicon carbide diode  
Datasheet - production data  
Description  
The SiC diode is an ultrahigh performance power  
$
.
Schottky diode. It is manufactured using a silicon  
carbide substrate. The wide band gap material  
allows the design of a Schottky diode structure  
with a 650 V rating. Due to the Schottky  
construction, no recovery is shown at turn-off and  
ringing patterns are negligible. The minimal  
capacitive turn-off behavior is independent of  
temperature and is ideal for automotive  
applications.  
.
$
.
72ꢀꢁꢁꢂ$&  
Especially suited for use as boost diode, this  
rectifier will enhance the performance in hard  
switching conditions. Its high forward surge  
capability ensures a good robustness during  
transient phases.  
Features  
Table 1. Device summary  
No or negligible reverse recovery  
Symbol  
Value  
Switching behavior independent of  
temperature  
I
12 A  
650 V  
175 °C  
F(AV)  
Dedicated to PFC applications  
High forward surge capability  
AEC-Q101 qualified  
V
RRM  
T (max)  
j
PPAP capable  
ECOPACK®2 compliant component  
January 2015  
DocID027332 Rev 1  
1/8  
This is information on a product in full production.  
www.st.com  

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