Datasheet > STPSC20065

STPSC20065

更新时间： 2023-12-20 18:46:09

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
13页	626K
描述
650 V 碳化硅功率肖特基二极管

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STPSC20065 数据手册

STPSC20065

650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultra high performance

power Schottky diode. It is manufactured using a

silicon carbide substrate. The wide band gap

material allows the design of a Schottky diode

structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

TO-220AC

TO-220AC Ins

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost performance in hard

switching conditions. Its high forward surge

capability ensures good robustness during

transient phases.

DO-247

Features



No reverse recovery charge in application

current range

Switching behavior independent of

temperature

Dedicated to PFC applications

Insulated package TO-220AC ins:

Table 1: Device summary

Symbol

I_F(AV)

V_RRM

Value

20 A



650 V

175 °C

1.30 V

T_j(max.)

V_F(typ.)



Insulated voltage: 2500 V rms

Typical package capacitance: 7 pF



High forward surge capability

ECOPACK®2 compliant component

Maximum operating: T_j175 °C

July 2017

DocID029246 Rev 2

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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