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STPSC20065C PDF预览

STPSC20065C

更新时间: 2023-12-20 18:45:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 肖特基二极管
页数 文件大小 规格书
10页 223K
描述
650 V、10 A双路碳化硅功率肖特基二极管

STPSC20065C 数据手册

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STPSC20065C  
Datasheet  
650 V, dual 10 A, power Schottky silicon carbide diode  
Features  
A1  
A2  
No or negligible reverse recovery  
Switching behavior independent of temperature  
Low Forward voltage drop  
K
Operating Tj from -40 °C to +175 °C  
ECOPACK2 compliant component  
Power efficient product  
Applications  
A2  
Air conditioning equipment  
K
A1  
PFC  
TO-247 LL  
OBC (On board battery chargers)  
Server Power supplies  
Telecom power  
Product label  
Description  
The STPSC20065C is an ultra-high performance power Schottky diode. It is  
manufactured using a silicon carbide substrate. The wide band gap material allows  
the design of a Schottky diode structure with a 650 V rating. Due to the Schottky  
construction, no recovery is shown at turn-off and ringing patterns are negligible. The  
minimal capacitive turn-off behavior is independent of temperature.  
Product status  
Especially suited for use in PFC applications, this ST SiC diode will boost  
performance in hard switching conditions. Its high forward surge capability ensures  
good robustness during transient phases.  
STPSC20065C  
Product summary  
Symbol  
Value  
I
2 X 10 A  
650 V  
F(AV)  
V
RRM  
T
175 °C  
1.30 V  
j(max.)  
V
F(typ.)  
DS12994 - Rev 1 - April 2019  
www.st.com  
For further information contact your local STMicroelectronics sales office.  

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