Datasheet > STPSC10H065-Y

STPSC10H065-Y

更新时间： 2023-12-20 18:44:08

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
11页	554K
描述
汽车级650V、10 A TO-220 D2PAK碳化硅功率肖特基二极管

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STPSC10H065-Y 数据手册

STPSC10H065-Y

Automotive 650 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode is an ultra high performance

power Schottky diode. It is manufactured using a

silicon carbide substrate. The wide band gap

material allows the design of a Schottky diode

structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

Especially suited for use in PFC applications, this

ST SiC diode will boost performance in hard

switching conditions. Its high forward surge

capability ensures good robustness during

transient phases.

TO-220AC

D²PAK

Features



AEC-Q101 qualified

Table 1: Device summary

No or negligible reverse recovery

Switching behavior independent of

temperature

Symbol

I_F(AV)

Value

10 A

V_RRM

650 V

175 °C



Dedicated to PFC applications

High forward surge capability

PPAP capable

T_j(max.)

ECOPACK^®2 compliant component

February 2017

DocID026618 Rev 4

1/11

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...11

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