Datasheet > STPSC10H12G2-TR

STPSC10H12G2-TR

更新时间： 2024-09-28 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	369K
描述
1200V, 10A, silicon carbide power Schottky Diode

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STPSC10H12G2-TR 数据手册

STPSC10H12G2-TR

Datasheet

1200 V, 10 A, silicon carbide power Schottky diode

Features

•

No or negligible reverse recovery

Switching behavior independent of temperature

Robust high voltage periphery

Operating T_jfrom -40 °C to 175 °C

Low V_F

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant

D²PAK HV

Applications

Product label

•

On board charger (OBC)

DC/DC

PFC

Description

This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications,

in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.

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STPSC10H12G2-TR

The STPSC10H12G2-TR will boost performances in hard switching conditions. Its

high forward surge capability ensures good robustness during transient phases.

Product summary

10 A

F(AV)

1200 V

175 °C

1.35 V

RRM

T (max.)

V (typ.)

DS13404 - Rev 1 - August 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...11

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