Datasheet > STPSC10H12C

STPSC10H12C

更新时间： 2024-09-28 14:58:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
10页	426K
描述
1200 V、10 A双路高浪涌碳化硅功率肖特基二极管

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STPSC10H12C 数据手册

STPSC10H12C

1200 V power Schottky silicon carbide diode

Datasheet - production data

Description

The SiC diode, available in TO-247 LL, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low V_FSchottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

TO-247 LL

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Features

Symbol

I_F(AV)

Value

2 x 5 A

1200 V

175 °C

1.35 V



No or negligible reverse recovery

Switching behavior independent of

temperature

V_RRM



Robust high voltage periphery

Operating T_jfrom -40 °C to 175 °C

ECOPACK^®2 compliant

T_j(max.)

V_F(typ.)

February 2017

DocID030345 Rev 1

1/10

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...10

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