Datasheet > STPSC10H065BY-TR

STPSC10H065BY-TR

更新时间： 2023-12-20 18:46:32

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
11页	343K
描述
汽车级650 V、10 A DPAK碳化硅功率肖特基二极管

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STPSC10H065BY-TR 数据手册

STPSC10H065BY-TR

Datasheet

Automotive 650 V power Schottky silicon carbide diode

Features

•

AEC-Q101 qualified

No reverse recovery charge in application current range

Switching behavior independent of temperature

Recommended to PFC applications

PPAP capable

ECOPACK compliant component

Applications

•

On board charger (OBC)

Product status

Solar boost PFC

Telecom power equipment

Charging stations

STPSC10H065BY-TR

Product summary

Description

Symbol

Value

10 A

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured

using a silicon carbide substrate. The wide band gap material allows the design of

a Schottky diode structure with a 650 V rating. Due to the Schottky construction,

no recovery is shown at turn-off and ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of temperature.

F(AV)

650 V

175 °C

RRM

j(max.)

Especially suited for use in PFC applications, the SiC diode will boost performance in

hard switching conditions.

DS12496 - Rev 2 - October 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...11

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