STPSC10H065DI

更新时间： 2024-06-20 14:41:25

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		肖特基二极管
页数	文件大小	规格书
9页	122K
描述
650 V、10 A高浪涌碳化硅功率肖特基二极管

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STPSC10H065DI 数据手册

STPSC10H065

650 V power Schottky silicon carbide diode

Datasheet  production data

Features

■ No or negligible reverse recovery

■ Switching behavior independent of

temperature

■ Dedicated to PFC applications

■ High forward surge capability

Description

The SiC diode is an ultrahigh performance power

Schottky diode. It is manufactured using a silicon

carbide substrate. The wide bandgap material

allows the design of a Schottky diode structure

with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and

ringing patterns are negligible. The minimal

capacitive turn-off behavior is independent of

temperature.

TO-220AC

STPSC10H065D

D²PAK

STPSC10H065G-TR

Especially suited for use in PFC applications, this

ST SiC diode will boost the performance in hard

switching conditions. Its high forward surge

capability ensures a good robustness during

transient phases.

DPAK

STPSC10H065B-TR

Device summary

Table 1.

Symbol

I_F(AV)

V_RRM

Value

10 A

650 V

175 °C

T_j(max)

October 2012

Doc ID 023604 Rev 2

1/9

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...9

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