Datasheet > STPSC10H065G2

STPSC10H065G2

更新时间： 2024-09-28 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
11页	377K
描述
650 V, 10 A High Surge Silicon Carbide Power Schottky Diode

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STPSC10H065G2 数据手册

STPSC10H065G2

Datasheet

650 V, 10 A high surge silicon carbide power Schottky diode

Features

•

No or negligible reverse recovery

Switching behavior independent of temperature

High forward surge capability

Operating T_jfrom -40 °C to 175 °C

Power efficient product

D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

ECOPACK2 compliant component

D²PAK HV

Applications

•

Telecom power supply

Server power supply

Switch mode power supply

DCDC converters

LLC topologies

Description

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is

manufactured using a silicon carbide substrate. The wide band gap material allows

the design of a Schottky diode structure with a 650 V rating. Due to the Schottky

construction, no recovery is shown at turn-off and ringing patterns are negligible. The

minimal capacitive turn-off behavior is independent of temperature.

Product label

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in

charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC10H065G2 will boost performances in hard switching conditions. Its high

forward surge capability ensures good robustness during transient phases.

Product status

STPSC10H065G2

Product summary

Symbol

Value

10 A

F(AV)

650 V

175 °C

1.38 V

RRM

j(max.)

F(typ.)

DS13663 - Rev 1 - March 2021

For further information contact your local STMicroelectronics sales office.

www.st.com

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