Datasheet > STGB10H60DF

STGB10H60DF

更新时间： 2023-12-20 18:44:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		栅双极性晶体管
页数	文件大小	规格书
25页	742K
描述
600 V、10 A高速沟槽栅场截止H系列IGBT

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数据手册

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STGB10H60DF 数据手册

STGB10H60DF, STGF10H60DF, STGP10H60DF

Datasheet

Trench gate field-stop 600 V, 10 A high speed H series IGBT

Features

TAB

•

High speed switching

Tight parameters distribution

Safe paralleling

D²PAK

TO-220FP

TAB

Low thermal resistance

Short-circuit rated

Ultrafast soft recovery antiparallel diode

TO-220

C(2, TAB)

Applications

•

Motor control

UPS

G(1)

PFC

Description

E(3)

NG1E3C2T

These devices are IGBTs developed using an advanced proprietary trench gate field-

stop structure. These devices are part of the H series of IGBTs, which represents

an optimum compromise between conduction and switching losses to maximize the

efficiency of high switching frequency converters. Furthermore, a slightly positive

V_CE(sat)temperature coefficient and very tight parameter distribution result in safer

paralleling operation.

Product status link

STGB10H60DF

STGF10H60DF

STGP10H60DF

DS9880 - Rev 5 - January 2022

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...25

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