Datasheet > STD9916L

STD9916L

更新时间： 2024-11-20 04:01:55

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管
页数	文件大小	规格书
8页	899K
描述
N-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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STD9916L 数据手册

STU/D9916L

SamHop Microelectronics Corp.

Preliminary Mar.25 2004

N-Channel Enhancement Mode Field Effect Transistor

PRODUCT SUMMARY

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

VDSS

RDS(ON) ( m

Ω) Max

30@ VGS = 10V

40@ VGS = 4.5V

25A

30V

TO-252 and TO-251 Package.

SDU SERIES

TO-252AA(D-PAK)

SDD SERIES

TO-251(l-PAK)

ABSOLUTE MAXIMUM RATINGS (T =25 C unless otherwise noted)

Limit

Unit

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

Drain Current-Continuous^a@T

-Pulsed^b

= 25 C

Drain-Source Diode Forward Current ^a

Maximum Power Dissipation ^a

Operating Junction and Storage

Temperature Range

, TSTG

-55 to 175

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case

C/W

Thermal Resistance, Junction-to-Ambient

12 3 4 5 6 7 8

中文翻译

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与STD9916L相关器件

型号	品牌	获取价格	描述	数据表
STD9N10	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STD9N10-1	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N10L	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR
STD9N10L-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-251AA
STD9N10LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-252AA
STD9N10T4	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N40M2	STMICROELECTRONICS	获取价格	N沟道400 V、0.59 Ohm典型值、6 A MDmesh M2功率MOSFET，DP
STD9N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，
STD9N60M6	STMICROELECTRONICS	获取价格	N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
STD9N65DM6AG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK packa