生命周期: | Contact Manufacturer | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.76 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 25 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD9N10 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD9N10-1 | STMICROELECTRONICS |
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N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR | |
STD9N10L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR | |
STD9N10L-1 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-251AA | |
STD9N10LT4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA | |
STD9N10T4 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR | |
STD9N40M2 | STMICROELECTRONICS |
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N沟道400 V、0.59 Ohm典型值、6 A MDmesh M2功率MOSFET,DP | |
STD9N60M2 | STMICROELECTRONICS |
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N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET, | |
STD9N60M6 | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package | |
STD9N65DM6AG | STMICROELECTRONICS |
获取价格 |
Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK packa |