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STD9N60M2 PDF预览

STD9N60M2

更新时间: 2024-11-21 14:57:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
27页 803K
描述
N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET,DPAK封装

STD9N60M2 数据手册

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STD9N60M2, STP9N60M2, STU9N60M2  
Datasheet  
N-channel 600 V, 0.72 Ω typ., 5.5 A, MDmesh™ M2  
Power MOSFETs in DPAK, TO-220 and IPAK packages  
Features  
TAB  
TAB  
3
V
@ T  
R
max.  
I
P
TOT  
Order codes  
STD9N60M2  
STP9N60M2  
STU9N60M2  
Package  
DPAK  
DS  
Jmax  
DS(on)  
D
1
DPAK  
3
2
TO-220  
TAB  
1
650 V  
0.78 Ω  
5.5 A  
60 W  
TO-220  
IPAK  
3
2
IPAK  
1
Extremely low gate charge  
Excellent output capacitance (COSS) profile  
100% avalanche tested  
D(2, TAB)  
Zener-protected  
G(1)  
Applications  
Switching applications  
S(3)  
AM01475V1  
Description  
These devices are N-channel Power MOSFETs developed using the MDmesh™ M2  
technology. Thanks to their strip layout and improved vertical structure, these devices  
exhibit low on-resistance and optimized switching characteristics, rendering them  
suitable for the most demanding high-efficiency converters.  
Product status link  
STD9N60M2  
STP9N60M2  
STU9N60M2  
DS9553 - Rev 3 - December 2018  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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