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STD9N10LT4 PDF预览

STD9N10LT4

更新时间: 2024-11-19 23:35:03
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页数 文件大小 规格书
6页 78K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA

STD9N10LT4 数据手册

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STD9N10L  
N - CHANNEL 100V - 0.22- 9A IPAK/DPAK  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STD9N10L  
100 V  
< 0.27 Ω  
9 A  
TYPICAL RDS(on) = 0.22 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
HIGH dV/dt RUGGEDNESS  
3
3
2
1
1
APPLICATION ORIENTED  
CHARACTERIZATION  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
POWER MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCRONOUS RECTIFICATION  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
100  
VDGR  
VGS  
ID  
100  
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
9
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
6.4  
A
IDM()  
Ptot  
Drain Current (pulsed)  
36  
A
o
Total Dissipation at Tc = 25 C  
45  
0.3  
W
Derating Factor  
W/oC  
V/ns  
oC  
oC  
dV/dt(1) Peak Diode Recovery voltage slope  
7
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
April 2000  

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