5秒后页面跳转
STD9N10L-1 PDF预览

STD9N10L-1

更新时间: 2024-11-23 23:35:03
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 78K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-251AA

STD9N10L-1 数据手册

 浏览型号STD9N10L-1的Datasheet PDF文件第2页浏览型号STD9N10L-1的Datasheet PDF文件第3页浏览型号STD9N10L-1的Datasheet PDF文件第4页浏览型号STD9N10L-1的Datasheet PDF文件第5页浏览型号STD9N10L-1的Datasheet PDF文件第6页 
STD9N10L  
N - CHANNEL 100V - 0.22- 9A IPAK/DPAK  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STD9N10L  
100 V  
< 0.27 Ω  
9 A  
TYPICAL RDS(on) = 0.22 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
HIGH dV/dt RUGGEDNESS  
3
3
2
1
1
APPLICATION ORIENTED  
CHARACTERIZATION  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
POWER MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCRONOUS RECTIFICATION  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
100  
VDGR  
VGS  
ID  
100  
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
9
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
6.4  
A
IDM()  
Ptot  
Drain Current (pulsed)  
36  
A
o
Total Dissipation at Tc = 25 C  
45  
0.3  
W
Derating Factor  
W/oC  
V/ns  
oC  
oC  
dV/dt(1) Peak Diode Recovery voltage slope  
7
Tstg  
Storage Temperature  
-65 to 175  
175  
Tj  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/6  
April 2000  

与STD9N10L-1相关器件

型号 品牌 获取价格 描述 数据表
STD9N10LT4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9A I(D) | TO-252AA
STD9N10T4 STMICROELECTRONICS

获取价格

N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N40M2 STMICROELECTRONICS

获取价格

N沟道400 V、0.59 Ohm典型值、6 A MDmesh M2功率MOSFET,DP
STD9N60M2 STMICROELECTRONICS

获取价格

N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET,
STD9N60M6 STMICROELECTRONICS

获取价格

N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
STD9N65DM6AG STMICROELECTRONICS

获取价格

Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK packa
STD9N65M2 STMICROELECTRONICS

获取价格

N沟道650 V、0.79 Ohm典型值、5 A MDmesh M2功率MOSFET,DP
STD9N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET,DP
STD9NM50N STMICROELECTRONICS

获取价格

N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-2
STD9NM50N-1 STMICROELECTRONICS

获取价格

N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-2