Datasheet > STD9N10L-1

STD9N10L-1

更新时间： 2024-11-23 23:35:03

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	78K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-251AA

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中文翻译

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数据手册

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STD9N10L-1 数据手册

STD9N10L

N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STD9N10L

100 V

< 0.27 Ω

9 A

■

TYPICAL R_DS(on)= 0.22 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

HIGH dV/dt RUGGEDNESS

APPLICATION ORIENTED

CHARACTERIZATION

■

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

POWER MOTOR CONTROL

DC-DC & DC-AC CONVERTERS

SYNCRONOUS RECTIFICATION

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

100

V_DGR

V_GS

I_D

100

± 20

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

6.4

I_DM(•)

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

0.3

Derating Factor

W/^oC

V/ns

^oC

dV/dt(¹) Peak Diode Recovery voltage slope

T_stg

Storage Temperature

-65 to 175

175

T_j

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/6

April 2000

12 3 4 5 6

中文翻译

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与STD9N10L-1相关器件

型号	品牌	获取价格	描述	数据表
STD9N10LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-252AA
STD9N10T4	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N40M2	STMICROELECTRONICS	获取价格	N沟道400 V、0.59 Ohm典型值、6 A MDmesh M2功率MOSFET，DP
STD9N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，
STD9N60M6	STMICROELECTRONICS	获取价格	N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
STD9N65DM6AG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK packa
STD9N65M2	STMICROELECTRONICS	获取价格	N沟道650 V、0.79 Ohm典型值、5 A MDmesh M2功率MOSFET，DP
STD9N80K5	STMICROELECTRONICS	获取价格	N沟道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET，DP
STD9NM50N	STMICROELECTRONICS	获取价格	N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-2
STD9NM50N-1	STMICROELECTRONICS	获取价格	N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-2