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STD9NM60N PDF预览

STD9NM60N

更新时间: 2024-02-03 16:59:48
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
16页 902K
描述
N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

STD9NM60N 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.68雪崩能效等级(Eas):115 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):9 A最大漏极电流 (ID):6.5 A
最大漏源导通电阻:0.745 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):26 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD9NM60N 数据手册

 浏览型号STD9NM60N的Datasheet PDF文件第2页浏览型号STD9NM60N的Datasheet PDF文件第3页浏览型号STD9NM60N的Datasheet PDF文件第4页浏览型号STD9NM60N的Datasheet PDF文件第5页浏览型号STD9NM60N的Datasheet PDF文件第6页浏览型号STD9NM60N的Datasheet PDF文件第7页 
STD9NM60N  
STF9NM60N, STP9NM60N  
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK  
MDmesh™ II Power MOSFET  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max.  
Order codes  
ID  
3
3
2
2
1
STD9NM60N  
STF9NM60N  
STP9NM60N  
1
TO-220  
TO-220FP  
650 V  
< 0.745 Ω  
6.5 A  
100% avalanche tested  
3
1
Low input capacitance and gate charge  
Low gate input resistance  
DPAK  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆꢇ  
This series of devices is realized with the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
'ꢅꢁꢇ  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Device summary  
Order codes  
Marking  
Packages  
DPAK  
Packaging  
STD9NM60N  
STF9NM60N  
STP9NM60N  
Tape and reel  
Tube  
9NM60N  
TO-220FP  
TO-220  
October 2010  
Doc ID 18063 Rev 1  
1/16  
www.st.com  
16  

STD9NM60N 替代型号

型号 品牌 替代类型 描述 数据表
STP9NM60N STMICROELECTRONICS

完全替代

N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET

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