Datasheet > STD9N65DM6AG

STD9N65DM6AG

更新时间： 2023-12-20 18:45:40

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
17页	736K
描述
Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK package

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STD9N65DM6AG 数据手册

STD9N65DM6AG

Datasheet

Automotive-grade N-channel 650 V, 365 mΩ typ., 9 A MDmesh DM6

Power MOSFET in a DPAK package

Features

TAB

DS(on)

max.

Order code

STD9N65DM6AG

650 V

440 mΩ

9 A

DPAK

•

AEC-Q101 qualified

Fast-recovery body diode

D(2, TAB)

Lower R_DS(on)per area vs previous generation

Low gate charge, input capacitance and resistance

100% avalanche tested

G(1)

Extremely high dv/dt ruggedness

Zener-protected

Applications

S(3)

AM01476v1_tab

•

Switching applications

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STD9N65DM6AG

Product summary⁽¹⁾

Order code

STD9N65DM6AG

Marking

Package

Packing

9N65DM6

DPAK

Tape and reel

1. The HTRB test was performed at 80%

in compliance with AEC-Q101

(BR)DSS

rev. C. All the other tests were

performed according to rev. D.

DS13320 - Rev 2 - November 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

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