Datasheet > STD9N60M6

STD9N60M6

更新时间： 2024-11-21 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	323K
描述
N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

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STD9N60M6 数据手册

STD9N60M6

Datasheet

N‑channel 600 V 670 mΩ typ., 6 A

MDmesh M6 Power MOSFET in a DPAK package

Features

DS(on)

max.

Order code

TAB

STD9N60M6

600 V

750 mΩ

6 A

•

Reduced switching losses

DPAK

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

LLC converters, resonant converters

Boost PFC converters

S(3)

AM01476v1_tab

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STD9N60M6

Product summary

Order code

Marking

STD9N60M6

9N60M6

Package

Packing

DPAK

Tape and reel

DS13558 - Rev 1 - November 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...15

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STD9NM60T4	ETC	获取价格	N-CHANNEL 600V 0.55 OHM 8.3A TO-220/DPAK/IPAK ZENER-PROTECTED MDMESH POWER MOSFET
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