Datasheet > STD9N80K5

STD9N80K5

更新时间： 2023-12-20 18:45:42

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	514K
描述
N沟道800 V、0.73 Ohm典型值、7 A MDmesh K5功率MOSFET，DPAK封装

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数据手册

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STD9N80K5 数据手册

STD9N80K5

Datasheet

N-channel 800 V, 730 mΩ typ., 7 A MDmesh K5 Power MOSFET

in a DPAK package

Features

TAB

max.

DS(on)

TOT

Order code

STD9N80K5

800 V

900 mΩ

7 A

110 W

•

Industry’s lowest R_DS(on)x area

DPAK

Industry’s best figure of merit (FoM)

Ultra-low gate charge

(

)

2, TAB

100% avalanche tested

Zener-protected

(

)

Applications

•

Switching applications

(

)

AM15572V1

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh

K5 technology based on an innovative proprietary vertical structure. The result is

a dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

Product status link

STD9N80K5

Product summary

Order code

Marking

STD9N80K5

9N80K5

Package

Packing

DPAK

Tape and reel

DS11297 - Rev 4 - May 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...18

中文翻译

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