Datasheet > STD9N10

STD9N10

更新时间： 2024-01-16 03:02:26

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	131K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STD9N10 数据手册

STD9N10

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

< 0.27 Ω

I_D

STD9N10

100 V

9 A

■

TYPICAL R_DS(on)= 0.23 Ω

AVALANCHERUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175^oC OPERATING TEMPERATURE

APPLICATION ORIENTED

CHARACTERIZATION

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

APPLICATIONS

INTERNAL SCHEMATIC DIAGRAM

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

REGULATORS

DC-DC & DC-AC CONVERTERS

MOTOR CONTROL, AUDIO AMPLIFIERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

100

± 20

I_D

_DM(• )

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.3

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

March 1996

12 3 4 5 6 7...10

中文翻译

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与STD9N10相关器件

型号	品牌	获取价格	描述	数据表
STD9N10-1	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N10L	STMICROELECTRONICS	获取价格	N - CHANNEL 100V - 0.22ohm - 9A IPAK/DPAK POWER MOS TRANSISTOR
STD9N10L-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-251AA
STD9N10LT4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 9A I(D) \| TO-252AA
STD9N10T4	STMICROELECTRONICS	获取价格	N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR
STD9N40M2	STMICROELECTRONICS	获取价格	N沟道400 V、0.59 Ohm典型值、6 A MDmesh M2功率MOSFET，DP
STD9N60M2	STMICROELECTRONICS	获取价格	N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，
STD9N60M6	STMICROELECTRONICS	获取价格	N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
STD9N65DM6AG	STMICROELECTRONICS	获取价格	Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in DPAK packa
STD9N65M2	STMICROELECTRONICS	获取价格	N沟道650 V、0.79 Ohm典型值、5 A MDmesh M2功率MOSFET，DP