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STD100N10F7 PDF预览

STD100N10F7

更新时间: 2024-09-29 14:57:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
30页 666K
描述
N沟道100 V、0.0068 Ohm典型值、80 A STripFET F7功率MOSFET,DPAK封装

STD100N10F7 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:13 weeks风险等级:1.69
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:222016Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:TO-XXX (Inc. DPAK)
Samacsys Footprint Name:DPAK (TO-252)_6Samacsys Released Date:2015-07-28 09:15:31
Is Samacsys:N雪崩能效等级(Eas):400 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):32 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):120 W最大脉冲漏极电流 (IDM):180 A
子类别:FET General Purpose Powers表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD100N10F7 数据手册

 浏览型号STD100N10F7的Datasheet PDF文件第2页浏览型号STD100N10F7的Datasheet PDF文件第3页浏览型号STD100N10F7的Datasheet PDF文件第4页浏览型号STD100N10F7的Datasheet PDF文件第5页浏览型号STD100N10F7的Datasheet PDF文件第6页浏览型号STD100N10F7的Datasheet PDF文件第7页 
STB100N10F7, STD100N10F7, STF100N10F7  
STI100N10F7, STP100N10F7  
Datasheet  
N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs  
in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages  
TAB  
Features  
TAB  
3
2
1
V
R
DS(on)  
max.  
I
D
Order codes  
Package  
3
DS  
1
D2PAK  
DPAK  
2
STB100N10F7  
STD100N10F7  
STF100N10F7  
STI100N10F7  
STP100N10F7  
80 A  
80 A  
45 A  
80 A  
80 A  
D PAK  
TAB  
TAB  
DPAK  
100 V  
8.0 mΩ  
TO-220FP  
3
3
2
2
3
2
1
I PAK  
2
1
1
TO-220FP  
I2PAK  
TO-220  
TO-220  
Among the lowest RDS(on) on the market  
Excellent FoM (figure of merit)  
D(2, TAB)  
Low Crss/Ciss ratio for EMI immunity  
High avalanche ruggedness  
G(1)  
Applications  
Switching applications  
S(3)  
AM01475v1_noZen  
Description  
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced  
trench gate structure that results in very low on-state resistance, while also reducing  
internal capacitance and gate charge for faster and more efficient switching.  
Product status links  
STB100N10F7  
STD100N10F7  
STF100N10F7  
STI100N10F7  
STP100N10F7  
DS9291 - Rev 6 - March 2022  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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