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STD100NH03L PDF预览

STD100NH03L

更新时间: 2024-01-16 19:57:42
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 516K
描述
N-CHANNEL 30V - 0.005 W - 60A DPAK STripFET⑩ III POWER MOSFET

STD100NH03L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.7雪崩能效等级(Eas):700 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):60 A
最大漏极电流 (ID):60 A最大漏源导通电阻:0.0105 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):240 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD100NH03L 数据手册

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STD100NH03L  
N-CHANNEL 30V - 0.005 - 60A DPAK  
STripFET™ III POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STD100NH03L  
30 V  
< 0.0055 Ω  
60 A(2)  
TYPICAL R (on) = 0.005 @ 10 V  
DS  
R
* Qg INDUSTRY’s BENCHMARK  
DS(ON)  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
LOW THRESHOLD DEVICE  
3
1
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
DPAK  
TO-252  
(Suffix “T4”)  
DESCRIPTION  
The STD100NH03L utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology. This is  
suitable fot the most demanding DC-DC converter  
application where high efficiency is to be achieved.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY DC/DC CONVERTES  
Ordering Information  
SALES TYPE  
STD100NH03LT4  
MARKING  
D100NH03L  
PACKAGE  
TO-252  
PACKAGING  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
Drain-source Voltage (V = 0)  
30  
30  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
60  
V
GS  
(2)  
Drain Current (continuous) at T = 25°C  
I
A
C
D
(2)  
Drain Current (continuous) at T = 100°C  
I
60  
A
C
D
(3)  
I
Drain Current (pulsed)  
240  
100  
0.66  
700  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
mJ  
(4)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
September 2003  
1/11  

STD100NH03L 替代型号

型号 品牌 替代类型 描述 数据表
STP120NH03L STMICROELECTRONICS

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N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC co

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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 10A I(D) | TO-251