Datasheet > STD105N10F7AG

STD105N10F7AG

更新时间： 2023-12-20 18:44:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	658K
描述
汽车级N沟道100 V、6.8 mOhm典型值、80 A STripFET F7功率MOSFET，DPAK封装

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STD105N10F7AG 数据手册

STD105N10F7AG

Automotive-grade N-channel 100 V, 6.8 mΩ typ., 80 A,

STripFET™ F7 Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DSR_DS(on)max.

8 mΩ

I_D

P_TOT

STD105N10F7AG 100 V

80 A 120 W



Designed for automotive applications and

AEC-Q101 qualified



Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications

D(2, TAB)



Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

G(1)

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code

Marking

Package

DPAK

Packing

STD105N10F7AG

105N10F7

Tape and reel

June 2016

DocID027071 Rev 4

1/14

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...14

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