Datasheet > SST308_SOT-23

SST308_SOT-23

更新时间： 2024-02-01 17:07:25

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MICROSS		/
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描述
N-CHANNEL JFET

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数据手册

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SST308_SOT-23 数据手册

SST308

N-CHANNEL JFET

Linear Systems replaces discontinued Siliconix SST308

FEATURES

The SST308 is a high frequency n-channel JFET

DIRECT REPLACEMENT FOR SILICONIX SST308

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

offering a wide range and low noise performance. The

SOT-23 package is well suited for cost sensitive

applications and mass production.

G_pg= 11.5dB

NF = 2.7dB

ABSOLUTE MAXIMUM RATINGS @ 25°C¹

(See Packaging Information).

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation

MAXIMUM CURRENT

Gate Current

MAXIMUM VOLTAGES

Gate to Drain Voltage or Gate to Source Voltage

SST308 Benefits:

‐55°C to +150°C

‐55°C to +135°C

High Power Low Noise gain

Dynamic Range greater than 100dB

Easily matched to 75Ω input

350mW

10mA

‐25V

SST308 Applications:

UHV / VHF Amplifiers

Mixers

Oscillators

SST308 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

BV_GSS

V_GS(F)

V_GS(off)

I_DSS

CHARACTERISTIC

MIN

‐25

0.7

‐1

‐‐

TYP.

‐‐

MAX

‐‐

‐6.5

‐‐

UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate to Source Cutoff Voltage

Drain to Source Saturation Current²

Gate Operating Current (Note 3)

Drain to Source On Resistance

V_DS= 0V, I_G= ‐1µA

V_DS= 0V, I_G= 10mA

V_DS= 10V, I_D= 1nA

V_DS= 10V, V_GS= 0V

V_DG= 9V, I_D= 10mA

V_GS= 0V, I_D= 1mA

I_G

r_DS(on)

‐15

‐‐

SST308 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

g_fs

CHARACTERISTIC

Forward Transconductance

Output Conductance

Input Capacitance

MIN

‐‐

TYP.

110

MAX

‐‐

250

UNIT

µS

CONDITIONS

V_DS= 10V, I_D= 10mA , f = 1kHz

g_os

C_iss

‐‐

V_DS= 10V, V_GS= ‐10V , f = 1MHz

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C_rss

e_n

Reverse Transfer Capacitance

Equivalent Noise Voltage

‐‐

1.9

‐‐

2.5

‐‐

nV/√Hz

V_DS= 10V, I_D= 10mA , f = 100Hz

SST308 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX

UNIT

CONDITIONS

Noise Figure

f = 105MHz

f = 450MHz

f = 105MHz

‐‐

1.5

2.7

‐‐

G_pg

g_fg

Power Gain³

f = 450MHz

f = 105MHz

‐‐

11.5

‐‐

V_DS= 10V, I_D= 10mA

Forward Transconductance

f = 450MHz

f = 105MHz

f = 450MHz

‐‐

g_og

Output Conductance

0.16

0.55

Note 1 ‐ Absolute maximum ratings are limiting values above which SST308 serviceability may be impaired.

Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3%

Note 3 ‐ Measured at optimum input noise match

Micross Components Europe

Available Packages:

SOT-23 (Top View)

SST308 in SOT-23

SST308 in bare die.

Please contact Micross for full

package and die dimensions

Tel: +44 1603 788967

Email: chipcomponents@micross.com

Web: http://www.micross.com/distribution

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx

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与SST308_SOT-23相关器件

型号	品牌	获取价格	描述	数据表
SST308-E3	VISHAY	获取价格	Transistor
SST308-SOT-23	Linear	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308-SOT-23-3L-ROHS	Linear	获取价格	Transistor,
SST308T	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308-T1-E3	VISHAY	获取价格	Transistor
SST308T-1T1	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308T-1T2	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308T-2T1	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308T-2T2	VISHAY	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-
SST308TT1	TEMIC	获取价格	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-

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