Datasheet > SST309

SST309

更新时间： 2024-09-24 22:50:11

品牌	Logo	应用领域
Linear Systems		晶体晶体管光电二极管放大器
页数	文件大小	规格书
2页	272K
描述
SINGLE N-CHANNEL HIGH FREQUENCY JFET

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数据手册

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SST309 数据手册

U/J/SST308

SERIES

SINGLE N-CHANNEL HIGH

FREQUENCY JFET

Linear Integrated Systems

FEATURES

Direct Replacement For SILICONIX U/J/SST308 SERIES

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation (J/SST)

Continuous Power Dissipation (U)

Maximum Currents

G_pg= 11.5dB

NF = 2.7dB

J SERIES

TO-18

TO-92

BOTTOM VIEW

-55 to 150°C

-55 to 135°C

SST SERIES

SOT-23

TOP VIEW

350mW

500mW

Gate Current (J/SST)

Gate Current (U)

10mA

20mA

Maximum Voltages

Gate to Drain

Gate to Source

-25V

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV_GSS

V_GS(F)

I_G

r_DS(on)

e_n

CHARACTERISTIC

MIN TYP MAX UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate Operating Current

Drain to Source On Resistance

Equivalent Noise Voltage

-25

I_G= -1µA, V_DS= 0V

I_G= 10mA, V_DS= 0V

V_DG= 9V, I_D= 10mA

V_GS= 0V, I_D= 1mA

0.7

-15

Ω

nV/√Hz V_DS= 10V, I_D= 10mA, f = 100Hz

f = 105MHz

1.5

2.7

11.5

0.16

0.55

G_pg

g_fg

Noise Figure

Power Gain²

f = 450MHz

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

V_DS= 10V, I_D= 10mA

Forward

Transconductance

g_og

Output Conductance

Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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