Datasheet > SST309-SOT-23-3L

SST309-SOT-23-3L

更新时间： 2023-02-26 15:08:29

品牌	Logo	应用领域
凌特 - Linear		/
页数	文件大小	规格书
2页	281K
描述
Transistor,

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中文翻译

获取价格

数据手册

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SST309-SOT-23-3L 数据手册

U/J/SST308

SERIES

SINGLE N-CHANNEL HIGH

FREQUENCY JFET

FEATURES

Direct Replacement For SILICONIX U/J/SST308 SERIES

U SERIES

J SERIES

OUTSTANDING HIGH FREQUENCY GAIN

LOW HIGH FREQUENCY NOISE

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

G_pg= 11.5dB

NF = 2.7dB

TOP VIEW

Maximum Temperatures

Storage Temperature

-55 to 150°C

SST SERIES

SOT-23

Junction Operating Temperature

Maximum Power Dissipation

Continuous Power Dissipation (J/SST)⁴

Continuous Power Dissipation (U)⁵

Maximum Currents

TOP VIEW

350mW

500mW

Gate Current (J/SST)

10mA

20mA

Gate Current (U)

Maximum Voltages

Gate to Drain

-25V

Gate to Source

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

BV_GSS

V_GS(F)

I_G

CHARACTERISTIC

MIN TYP MAX UNIT

CONDITIONS

Gate to Source Breakdown Voltage

Gate to Source Forward Voltage

Gate Operating Current

-25

0.7

I_G= -1µA, V_DS= 0V

I_G= 10mA, V_DS= 0V

V_DG= 9V, I_D= 10mA

V_GS= 0V, I_D= 1mA

1.15

-15

r_DS(on)

e_n

Drain to Source On Resistance

Equivalent Noise Voltage

nV/√Hz V_DS= 10V, I_D= 10mA, f = 100Hz

f = 105MHz

1.5

2.7

G_pg

g_fg

Noise Figure

Power Gain²

f = 450MHz

f = 105MHz

f = 450MHz

f = 105MHz

f = 450MHz

11.5

V_DS= 10V, I_D= 10mA

Forward

Transconductance

f = 105MHz

f = 450MHz

0.16

0.55

g_og

Output Conductance

Gate Reverse Current

IGSS

-1

V_GS= -15V, V_DS= 0V

Linear Integrated Systems

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4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

1/31/12

Rev#A5 ECN#U/J/SST 308

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