是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | TO-236, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.21.00.75 |
风险等级: | 5.18 | 其他特性: | LOW NOISE |
配置: | SINGLE | 最小漏源击穿电压: | 25 V |
FET 技术: | JUNCTION | 最大反馈电容 (Crss): | 2.5 pF |
最高频带: | ULTRA HIGH FREQUENCY BAND | JEDEC-95代码: | TO-236 |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | DEPLETION MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST309(SOT-23) | MICROSS |
获取价格 |
Transistor | |
SST309_SOT-23 | MICROSS |
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N-CHANNEL JFET | |
SST309-E3 | VISHAY |
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Transistor, | |
SST309-SOT-23 | Linear |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST309-SOT-23-3L | Linear |
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Transistor, | |
SST309-SOT-23-3L-ROHS | Linear |
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Transistor, | |
SST309T | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST309T1 | CALOGIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST309-T1-E3 | VISHAY |
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Very High System Sensitivity | |
SST309T-1T2 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |