是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.82 | FET 技术: | JUNCTION |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
最高工作温度: | 135 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SST308-SOT-23 | Linear |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308-SOT-23-3L-ROHS | Linear |
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Transistor, | |
SST308T | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308-T1-E3 | VISHAY |
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Transistor | |
SST308T-1T1 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308T-1T2 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308T-2T1 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308T-2T2 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308TT1 | TEMIC |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- | |
SST308TT2 | VISHAY |
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RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N- |