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SST308 PDF预览

SST308

更新时间: 2024-10-30 22:50:11
品牌 Logo 应用领域
Linear Systems 晶体晶体管光电二极管放大器
页数 文件大小 规格书
2页 272K
描述
SINGLE N-CHANNEL HIGH FREQUENCY JFET

SST308 数据手册

 浏览型号SST308的Datasheet PDF文件第2页 
U/J/SST308  
SERIES  
SINGLE N-CHANNEL HIGH  
FREQUENCY JFET  
Linear Integrated Systems  
FEATURES  
Direct Replacement For SILICONIX U/J/SST308 SERIES  
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE  
ABSOLUTE MAXIMUM RATINGS1  
@ 25 °C (unless otherwise stated)  
Maximum Temperatures  
Storage Temperature  
Junction Operating Temperature  
Maximum Power Dissipation  
Continuous Power Dissipation (J/SST)  
Continuous Power Dissipation (U)  
Maximum Currents  
Gpg = 11.5dB  
NF = 2.7dB  
J SERIES  
TO-18  
TO-92  
BOTTOM VIEW  
BOTTOM VIEW  
D
S
2
1
3
G
D
1
S
2
G
3
-55 to 150°C  
-55 to 135°C  
SST SERIES  
SOT-23  
TOP VIEW  
350mW  
500mW  
1
D
3
G
Gate Current (J/SST)  
Gate Current (U)  
10mA  
20mA  
2
S
Maximum Voltages  
Gate to Drain  
Gate to Source  
-25V  
-25V  
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)  
SYMBOL  
BVGSS  
VGS(F)  
IG  
rDS(on)  
en  
CHARACTERISTIC  
MIN TYP MAX UNIT  
CONDITIONS  
Gate to Source Breakdown Voltage  
Gate to Source Forward Voltage  
Gate Operating Current  
Drain to Source On Resistance  
Equivalent Noise Voltage  
-25  
IG = -1µA, VDS = 0V  
IG = 10mA, VDS = 0V  
VDG = 9V, ID = 10mA  
VGS = 0V, ID = 1mA  
V
0.7  
6
1
-15  
35  
pA  
nV/Hz VDS = 10V, ID = 10mA, f = 100Hz  
f = 105MHz  
1.5  
2.7  
16  
11.5  
14  
13  
0.16  
0.55  
NF  
Gpg  
gfg  
Noise Figure  
Power Gain2  
f = 450MHz  
f = 105MHz  
f = 450MHz  
f = 105MHz  
f = 450MHz  
f = 105MHz  
f = 450MHz  
dB  
VDS = 10V, ID = 10mA  
Forward  
Transconductance  
mS  
gog  
Output Conductance  
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261  

SST308 替代型号

型号 品牌 替代类型 描述 数据表
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