Datasheet > SST25VF512_10

SST25VF512_10

更新时间： 2024-09-19 09:04:35

品牌	Logo	应用领域
SST		闪存
页数	文件大小	规格书
23页	276K
描述
512 Kbit SPI Serial Flash

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SST25VF512_10 数据手册

512 Kbit SPI Serial Flash

SST25VF512

SST25VF512512Kb Serial Peripheral Interface (SPI) flash memory

Data Sheet

FEATURES:

•

Single 2.7-3.6V Read and Write Operations

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

End-of-Write Detection

– Software Status

Hold Pin (HOLD#)

– Suspends a serial sequence to the memory

without deselecting the device

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

Software Write Protection

– Write protection through Block-Protection bits in

status register

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

20 MHz Max Clock Frequency

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

Low Power Consumption:

– Active Read Current: 7 mA (typical)

– Standby Current: 8 µA (typical)

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

Fast Erase and Byte-Program:

•

Packages Available

– 8-lead SOIC (4.9mm x 6mm)

– 8-contact WSON

– Chip-Erase Time: 70 ms (typical)

– Sector- or Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µs (typical)

All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

SST’s serial flash family features a four-wire, SPI-compati-

ble interface that allows for a low pin-count package occu-

pying less board space and ultimately lowering total system

costs. SST25VF512 SPI serial flash memory is manufac-

tured with SST’s proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

rent, and time of application. Since for any given voltage

range, the SuperFlash technology uses less current to pro-

gram and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less than

alternative flash memory technologies. The SST25VF512

device operates with a single 2.7-3.6V power supply.

The SST25VF512 device is offered in both 8-lead SOIC

and 8-contact WSON packages. See Figure 1 for the pin

assignments.

The SST25VF512 device significantly improves perfor-

mance, while lowering power consumption. The total

energy consumed is a function of the applied voltage, cur-

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

S71192-09-000

1/06

12 3 4 5 6 7...23

中文翻译

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与SST25VF512_10相关器件

型号	品牌	获取价格	描述	数据表
SST25VF512-20-4C-QA	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512-20-4C-QAE	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512-20-4C-SA	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512-20-4C-SAE	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512-20-4C-SAE-T	MICROCHIP	获取价格	SST25VF512-20-4C-SAE-T
SST25VF512-20-4I-QAE	MICROCHIP	获取价格	512K X 1 FLASH 2.7V PROM, PDSO8, WSON-8
SST25VF512A	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512A	MICROCHIP	获取价格	SST's serial flash family features a four-wire, SPI-compatible interface that allows for a
SST25VF512A-33-4C-QAE	SST	获取价格	512 Kbit SPI Serial Flash
SST25VF512A-33-4C-QAE-T	MICROCHIP	获取价格	SST25VF512A-33-4C-QAE-T

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