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SST25VF512A-33-4E-QAE

更新时间： 2024-11-19 20:18:15
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
25页 257K
描述
EEPROM, 512KX1, Serial, CMOS, 5 X 6 MM, LEAD FREE, WSON-8

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SST25VF512A-33-4E-QAE 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：SON包装说明：5 X 6 MM, LEAD FREE, WSON-8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.58Is Samacsys：N
最大时钟频率 (fCLK)：33 MHz耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-XDSO-N8JESD-609代码：e3
长度：6 mm内存密度：524288 bit
内存集成电路类型：FLASH内存宽度：1
功能数量：1端子数量：8
字数：524288 words字数代码：512000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-20 °C组织：512KX1
封装主体材料：UNSPECIFIED封装代码：HVSON
封装等效代码：SOLCC8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：0.8 mm串行总线类型：SPI
最大待机电流：0.000015 A子类别：Flash Memories
最大压摆率：0.03 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：MATTE TIN
端子形式：NO LEAD端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：5 mm
写保护：HARDWARE/SOFTWAREBase Number Matches：1

SST25VF512A-33-4E-QAE 数据手册

 浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第2页浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第3页浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第4页浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第5页浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第6页浏览型号SST25VF512A-33-4E-QAE的Datasheet PDF文件第7页 
512 Kbit SPI Serial Flash  
SST25VF512A  
SST25VF512A512Kb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
33 MHz Max Clock Frequency  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
•
•
End-of-Write Detection  
– Software Status  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Temperature Range  
•
•
•
•
•
•
•
•
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
•
Packages Available  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-compati-  
ble interface that allows for a low pin-count package occu-  
pying less board space and ultimately lowering total system  
costs. SST25VF512A SPI serial flash memory is manufac-  
tured with SST’s proprietary, high-performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
rent, and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to pro-  
gram and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less than  
alternative flash memory technologies. The SST25VF512A  
device operates with a single 2.7-3.6V power supply.  
The SST25VF512A device is offered in both 8-lead SOIC  
and 8-contact WSON packages. See Figure 1 for the pin  
assignments.  
The SST25VF512A device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage, cur-  
©2004 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71264-00-000  
1
6/04  
1234567...25

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与SST25VF512A-33-4E-QAE相关器件

型号 品牌 获取价格 描述 数据表
SST25VF512A-33-4E-SA SILICON

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 		EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8
SST25VF512A-33-4E-SAE SST

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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4E-SAE SILICON

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 		EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, LEAD FREE, MS-012AA, SOIC-8
SST25VF512A-33-4I-QA SILICON

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 		EEPROM, 512KX1, Serial, CMOS, 5 X 6 MM, WSON-8
SST25VF512A-33-4I-QAE MICROCHIP

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 		512K X 1 SPI BUS SERIAL EEPROM, PDSO8, 5 X 6 MM, ROHS COMPLIANT, WSON-8
SST25VF512A-33-4I-QAE SST

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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4I-QAE-T MICROCHIP

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 		SST25VF512A-33-4I-QAE-T
SST25VF512A-33-4I-SA SILICON

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 		EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, MS-012AA, SOIC-8
SST25VF512A-33-4I-SAE SST

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 		512 Kbit SPI Serial Flash
SST25VF512A-33-4I-SAE-T MICROCHIP

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 		SST25VF512A-33-4I-SAE-T

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