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SST25VF512A-33-4E-SAE

更新时间： 2024-11-23 20:17:03
品牌 Logo 应用领域
芯科 - SILICON 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
25页 257K
描述
EEPROM, 512KX1, Serial, CMOS, PDSO8, 0.150 INCH, LEAD FREE, MS-012AA, SOIC-8

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SST25VF512A-33-4E-SAE 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：SOIC
包装说明：0.150 INCH, LEAD FREE, MS-012AA, SOIC-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.32.00.51风险等级：5.58
Is Samacsys：N最大时钟频率 (fCLK)：33 MHz
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-PDSO-G8
JESD-609代码：e3长度：4.9 mm
内存密度：524288 bit内存集成电路类型：FLASH
内存宽度：1功能数量：1
端子数量：8字数：524288 words
字数代码：512000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-20 °C
组织：512KX1封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：1.75 mm
串行总线类型：SPI最大待机电流：0.000015 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：OTHER
端子面层：MATTE TIN端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：40类型：NOR TYPE
宽度：3.9 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

SST25VF512A-33-4E-SAE 数据手册

 浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第2页浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第3页浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第4页浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第5页浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第6页浏览型号SST25VF512A-33-4E-SAE的Datasheet PDF文件第7页 
512 Kbit SPI Serial Flash  
SST25VF512A  
SST25VF512A512Kb Serial Peripheral Interface (SPI) flash memory  
Advance Information  
FEATURES:  
•
•
Single 2.7-3.6V Read and Write Operations  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
33 MHz Max Clock Frequency  
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Low Power Consumption:  
– Active Read Current: 7 mA (typical)  
– Standby Current: 8 µA (typical)  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
•
•
End-of-Write Detection  
– Software Status  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Temperature Range  
•
•
•
•
•
•
•
•
Fast Erase and Byte-Program:  
– Chip-Erase Time: 70 ms (typical)  
– Sector- or Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 14 µs (typical)  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
– Extended: -20°C to +85°C  
•
Packages Available  
– 8-lead SOIC 150 mil body width  
– 8-contact WSON (5mm x 6mm)  
PRODUCT DESCRIPTION  
SST’s serial flash family features a four-wire, SPI-compati-  
ble interface that allows for a low pin-count package occu-  
pying less board space and ultimately lowering total system  
costs. SST25VF512A SPI serial flash memory is manufac-  
tured with SST’s proprietary, high-performance CMOS  
SuperFlash technology. The split-gate cell design and  
thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
rent, and time of application. Since for any given voltage  
range, the SuperFlash technology uses less current to pro-  
gram and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less than  
alternative flash memory technologies. The SST25VF512A  
device operates with a single 2.7-3.6V power supply.  
The SST25VF512A device is offered in both 8-lead SOIC  
and 8-contact WSON packages. See Figure 1 for the pin  
assignments.  
The SST25VF512A device significantly improves perfor-  
mance, while lowering power consumption. The total  
energy consumed is a function of the applied voltage, cur-  
©2004 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71264-00-000  
1
6/04  
1234567...25

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SST25VF512A-33-4I-SAE-T MICROCHIP

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SST25WF010 SST

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SST25WF010-40-5I-QAE SST

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SST25WF010-40-5I-QAF SST

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