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SST25WF020-40-5I-QAE

更新时间： 2024-11-19 06:14:23
品牌 Logo 应用领域
SST 闪存内存集成电路光电二极管时钟
页数 文件大小 规格书
32页 882K
描述
512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash

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SST25WF020-40-5I-QAE 数据手册

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512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash  
SST25WF512 / SST25WF010 / SST25WF020 / SST25WF040  
SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
•
•
Single Voltage Read and Write Operations  
– 1.65-1.95V  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
High Speed Clock Frequency  
– 40MHz  
•
•
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin  
Reset Pin (RST#) or Programmable Hold Pin  
(HOLD#) option  
– Hardware Reset pin as default  
– Hold pin option to suspend a serial sequence  
without deselecting the device  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Temperature Range  
Superior Reliability  
– Endurance: 100,000 Cycles  
– Greater than 100 years Data Retention  
•
•
Ultra-Low Power Consumption:  
– Active Read Current: 2 mA (typical @ 20MHz)  
– Standby Current: 2 µA (typical)  
•
•
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
(2 Mbit and 4 Mbit only)  
•
•
•
Fast Erase and Byte-Program:  
– Industrial: -40°C to +85°C  
Packages Available  
– 8-lead SOIC (150 mils)  
– Chip-Erase Time: 125 ms (typical)  
– Sector-/Block-Erase Time: 62ms (typical)  
– Byte-Program Time: 50 µS (typical)  
– 8-contact WSON (5mm x 6mm)  
•
All non-Pb (lead-free) devices are RoHS compliant  
PRODUCT DESCRIPTION  
The SST25WF512, SST25WF010, SST25WF020, and  
SST25WF040 are members of the Serial Flash 25 Series  
family and feature a four-wire, SPI-compatible interface that  
allows for a low pin-count package which occupies less  
board space and ultimately lowers total system costs.  
SST25WF512/010/020/040 SPI serial flash memories are  
manufactured with SST proprietary, high-performance  
CMOS SuperFlash technology. The split-gate cell design  
and thick-oxide tunneling injector attain better reliability and  
manufacturability compared with alternate approaches.  
single power supply of 1.65-1.95V for SST25WF512/010/  
020/040. The total energy consumed is a function of the  
applied voltage, current, and time of application. Since for  
any given voltage range, the SuperFlash technology uses  
less current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program oper-  
ation is less than alternative flash memory technologies.  
The SST25WF512/010/020/040 devices are offered in  
both 8-lead SOIC and an 8-contact WSON packages. See  
Figure 2 for the pin assignment.  
The SST25WF512/010/020/040 devices significantly  
improve performance and reliability, while lowering power  
consumption. The devices write (Program or Erase) with a  
©2009 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71328-08-000  
1
11/09  
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