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SST25WF020A-40-5I-SN PDF预览

SST25WF020A-40-5I-SN

更新时间: 2024-11-23 12:01:55
品牌 Logo 应用领域
美国微芯 - MICROCHIP 闪存
页数 文件大小 规格书
36页 546K
描述
2 Mbit 1.8V SPI Serial Flash

SST25WF020A-40-5I-SN 技术参数

生命周期:Active包装说明:SOP,
Reach Compliance Code:compliant风险等级:5.65
最大时钟频率 (fCLK):40 MHzJESD-30 代码:R-PDSO-G8
长度:4.9 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL编程电压:1.8 V
筛选级别:TS 16949座面最大高度:1.75 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL类型:NOR TYPE
宽度:3.9 mmBase Number Matches:1

SST25WF020A-40-5I-SN 数据手册

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SST25WF020A  
2 Mbit 1.8V SPI Serial Flash  
• Packages Available  
Features  
- 8-lead SOIC (150 mils)  
• Single Voltage Read and Write Operations  
- 1.65-1.95V  
- 8-contact USON (2mm x 3mm)  
• All devices are RoHS compliant  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- 40MHz  
Product Description  
SST25WF020A is a member of the Serial Flash 25  
Series family and feature a four-wire, SPI-compatible  
interface that allows for a low pin-count package which  
occupies less board space and ultimately lowers total  
system costs. SPI serial flash memory is manufactured  
with proprietary, high-performance CMOS SuperFlash  
technology. The split-gate cell design and thick-oxide  
tunneling injector attain better reliability and manufac-  
turability compared with alternate approaches.  
• Superior Reliability  
- Endurance: 100,000 Cycles  
- Greater than 20 years Data Retention  
• Ultra-Low Power Consumption:  
- Active Read Current: 4 mA (typical)  
- Standby Current: 10 µA (typical)  
- Power-down Mode Standby Current: 4 µA (typical)  
• Flexible Erase Capability  
This Serial Flash significantly improve performance  
and reliability, while lowering power consumption. The  
device writes (Program or Erase) with a single power  
supply of 1.65-1.95V. The total energy consumed is a  
function of the applied voltage, current, and time of  
application. Since for any given voltage range, the  
SuperFlash technology uses less current to program  
and has a shorter erase time, the total energy con-  
sumed during any Erase or Program operation is less  
than alternative flash memory technologies.  
- Uniform 4 KByte sectors  
- Uniform 64 KByte overlay blocks  
• Page Program Mode  
- 256 Bytes/Page  
• Fast Erase and Page-Program:  
- Chip-Erase Time: 300 ms (typical)  
- Sector-Erase Time: 40 ms (typical)  
- Block-Erase Time: 80 ms (typical)  
- Page-Program Time: 3 ms/ 256 bytes (typical)  
• End-of-Write Detection  
SST25WF020A is offered in 8-lead SOIC and 8-contact  
USON packages. See Figure 2-1 for the pin assign-  
ments.  
- Software polling the BUSY bit in Status Register  
• Hold Pin (HOLD#)  
- Suspend a serial sequence without deselect-  
ing the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of  
the status register  
• Software Write Protection  
- Write protection through Block-Protection bits  
in status register  
Temperature Range  
- Industrial: -40°C to +85°C  
2013 Microchip Technology Inc.  
Preliminary  
DS21392A-page 1  

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