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SST25WF040B PDF预览

SST25WF040B

更新时间: 2024-11-10 14:53:11
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
40页 1235K
描述
SST25WF040B is a member of the Serial Flash 25 Series family and feature a four-wire, SPI-compatib

SST25WF040B 数据手册

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SST25WF040B  
4-Mbit 1.8V SPI Serial Flash  
Features  
Packages  
• Single Voltage Read and Write Operations:  
• 8-Lead SOIC (150 mils) and 8-Contact USON  
(2 mm x 3 mm)  
- 1.65V-1.95V  
• Serial Interface Architecture:  
- SPI Compatible: Mode 0 and Mode 3  
• High-Speed Clock Frequency:  
- 40 MHz  
Product Description  
SST25WF040B is a member of the Serial Flash 25  
Series family and features a four-wire, SPI-compatible  
interface that allows for a low pin count package which  
occupies less board space and ultimately lowers total  
system costs. SPI Serial Flash memory is  
manufactured with proprietary, high-performance  
CMOS SuperFlash® technology. The split-gate cell  
design and thick-oxide tunneling injector attain better  
reliability and manufacturability compared with  
alternate approaches.  
• Dual Input/Output Support:  
- Fast Read Dual Output Instruction (3BH)  
- Fast Read Dual I/O Instruction (BBH)  
• Superior Reliability:  
- Endurance: 100,000 cycles  
- Greater than 20 years data retention  
• Ultra-Low Power Consumption:  
- Active Read current: 4 mA (typical)  
- Standby current: 7 µA (typical)  
- Power-Down mode Standby current: 2 µA (typical)  
• Flexible Erase Capability:  
- Uniform 4-Kbyte sectors  
This Serial Flash significantly improves performance  
and reliability, while lowering power consumption. The  
device writes (Program or Erase) with a single power  
supply of 1.65V-1.95V. The total energy consumed is a  
function of the applied voltage, current and time of  
application. For any given voltage range, the  
SuperFlash technology uses less current to program  
and has a shorter erase time. As a result, the total  
energy consumed during any Erase or Program  
operation is less than alternative Flash memory  
technologies.  
- Uniform 64-Kbyte overlay blocks  
• Page Program Mode:  
- 256 bytes/page  
• Fast Erase and Page Program:  
- Chip Erase time: 400 ms (typical)  
- Sector Erase time: 40 ms (typical)  
- Block Erase time: 80 ms (typical)  
- Page Program time: 0.8 ms/256 bytes (typical)  
• End-of-Write Detection:  
See Figure 2-1 for the pin assignments.  
- Software polling the BUSY bit in STATUS  
register  
• Hold Pin (HOLD#):  
- Suspend a serial sequence without deselecting the  
device  
• Write Protection (WP#):  
- Enables/Disables the Lock-Down function of the  
STATUS register  
• Software Write Protection:  
- Write protection through Block Protection bits in  
STATUS register  
Temperature Range:  
- Industrial: -40°C to +85°C  
- Extended: -40°C to +125°C  
• All devices are RoHS compliant  
2013-2023 Microchip Technology Inc. and its subsidiaries  
DS20005193G-page 1  

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IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC