Datasheet > SST25WF040B-40E/SN

SST25WF040B-40E/SN

更新时间： 2024-11-07 21:08:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		时钟光电二极管内存集成电路
页数	文件大小	规格书
41页	1679K
描述
Flash

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SST25WF040B-40E/SN 技术参数

生命周期：	Active	包装说明：	SOIC-8
Reach Compliance Code：	compliant	Factory Lead Time：	8 weeks
风险等级：	5.72	最大时钟频率 (fCLK)：	40 MHz
JESD-30 代码：	R-PDSO-G8	长度：	4.9 mm
内存密度：	4194304 bit	内存集成电路类型：	FLASH
内存宽度：	1	功能数量：	1
端子数量：	8	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	4MX1	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
编程电压：	1.8 V	筛选级别：	TS 16949
座面最大高度：	1.75 mm	最大供电电压 (Vsup)：	1.95 V
最小供电电压 (Vsup)：	1.65 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
宽度：	3.9 mm	Base Number Matches：	1

SST25WF040B-40E/SN 数据手册

浏览型号SST25WF040B-40E/SN的Datasheet PDF文件第2页

浏览型号SST25WF040B-40E/SN的Datasheet PDF文件第3页

浏览型号SST25WF040B-40E/SN的Datasheet PDF文件第4页

浏览型号SST25WF040B-40E/SN的Datasheet PDF文件第5页

浏览型号SST25WF040B-40E/SN的Datasheet PDF文件第6页

SST25WF040B

4 Mbit 1.8V SPI Serial Flash

Features

Product Description

• Single Voltage Read and Write Operations

SST25WF040B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide

tunneling injector attain better reliability and manufac-

turability compared with alternate approaches.

- 1.65-1.95V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 40MHz

• Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

• Superior Reliability

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

• Ultra-Low Power Consumption:

- Active Read Current: 4 mA (typical)

- Standby Current: 7 µA (typical)

- Power-down Mode Standby Current: 2 µA (typical)

• Flexible Erase Capability

- Uniform 4 KByte sectors

SST25WF040B is offered in 8-lead SOIC and 8-contact

USON packages. See Figure 2-1 for the pin assign-

ments.

- Uniform 64 KByte overlay blocks

• Page Program Mode

- 256 Bytes/Page

• Fast Erase and Page-Program:

- Chip-Erase Time: 400 ms (typical)

- Sector-Erase Time: 40 ms (typical)

- Block-Erase Time: 80 ms (typical)

- Page-Program Time: 0.8 ms/ 256 bytes (typical)

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

• Hold Pin (HOLD#)

- Suspend a serial sequence without deselecting the

device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of the

status register

• Software Write Protection

- Write protection through Block-Protection bits in

status register

• Temperature Range

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

• Packages Available

- 8-lead SOIC (150 mils)

- 8-contact USON (2mm x 3mm)

• All devices are RoHS compliant

 2013-2018 Microchip Technology Inc.

DS20005193E-page 1

12 3 4 5 6 7...41

中文翻译

下载PDF

与SST25WF040B-40E/SN相关器件

型号	品牌	获取价格	描述	数据表
SST25WF040B-40I/SN	MICROCHIP	获取价格	FLASH 1.8V PROM
SST25WF040BT-40E/SN	MICROCHIP	获取价格	Flash
SST25WF040BT-40I/NP	MICROCHIP	获取价格	FLASH 1.8V PROM
SST25WF040BT-40I/SN	MICROCHIP	获取价格	FLASH 1.8V PROM
SST25WF080	SST	获取价格	8Mbit 1.8V SPI Serial Flash
SST25WF080_12	MICROCHIP	获取价格	8 Mbit 1.8V SPI Serial Flash
SST25WF080-75-4I-SAE	SST	获取价格	8Mbit 1.8V SPI Serial Flash
SST25WF080-75-4I-SAF	SST	获取价格	8Mbit 1.8V SPI Serial Flash
SST25WF080-75-4I-SAF-T	MICROCHIP	获取价格	IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC
SST25WF080-75-4I-Z1AE	MICROCHIP	获取价格	SST25WF080-75-4I-Z1AE

与SST25WF040B-40E/SN相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

SST25WF040B-40E/SN

SST25WF040B-40E/SN 技术参数

SST25WF040B-40E/SN 数据手册

与SST25WF040B-40E/SN相关器件

与SST25WF040B-40E/SN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SST25WF040B-40E/SN

SST25WF040B-40E/SN 技术参数

SST25WF040B-40E/SN 数据手册

与SST25WF040B-40E/SN相关器件

与SST25WF040B-40E/SN相关文章

您还可以找

您在本页遇到什么问题？