Datasheet > SST2605

SST2605

更新时间： 2024-09-18 06:14:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	294K
描述
P-Channel Enhancement Mode Power Mos.FET

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SST2605 数据手册

SST2605

-4.0A, -30V,RDS(ON) 80m

Elektronische Bauelemente

P-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SOT-26

Description

0.20

0.37Ref.

The SST2605 utiltzed advance processing techniques to achieve the lowest

possible on-resistance, extermely efficient and cost-effectiveness device.

The SST2605 is universally used for all commercial-industrial applications.

0.60 Ref.

2.60

3.00

0.25

1.40

1.80

0.30

0.55

0.95 Ref.

0~0.1

2.70

3.10

1.20Ref.

10 ^o

Features

Dimensions in millimeters

* Fast Switching Characteristic

* Lower Gate Charge

* Small Footprint & Low Profile Package

2 6 0 5

Date Code

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

-30

±20

-4.0

-3.3

-20

VGS

ID@TA=25 ^o

ID@TA=70^o

Continuous Drain Current

Pulsed Drain Current¹

Total Power Dissipation

IDM

PD@TA=25

^oC

2.0

0.016

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Unit

Symbol

Ratings

C /W

Rthj-a

Thermal Resistance Junction-ambient

62.5

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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