Datasheet > SST2622

SST2622

更新时间： 2024-11-26 06:14:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	367K
描述
N-Channel Enhancement Mode Power Mos.FET

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SST2622 数据手册

SST2622

520mA, 50V,RDS(ON) 1.8

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

SOT-26

Description

0.20

0.37Ref.

0.60 Ref.

The SST2622 utiltzed advance processing techniques to achieve the lowest

possible on-resistance, extermely efficient and cost-effectiveness device.

The SOT-26 is universally used for all commercial-industrial applications.

2.60

3.00

0.25

1.40

1.80

0.30

0.55

0.95 Ref.

0~0.1

2.70

3.10

1.20Ref.

10 ^o

Features

Dimensions in millimeters

* RoHS Compliant

* Low Gate Charge

* Surface Mount Package

2 6 2 2

Date Code

Absolute Maximum Ratings

Parameter

Symbol

VDS

Ratings

Unit

Drain-Source Voltage

VGS

±20

Gate-Source Voltage

^oC

Continuous Drain Current³,VGS@10V

Pulsed Drain Current¹

520

ID@TA=25

ID@TA=70^oC

IDM

410

1.5

Total Power Dissipation

PD@TA=25

^oC

0.8

0.006

W/^oC

^oC

Linear Derating Factor

-55~+150

Tj, Tstg

Operating Junction and Storage Temperature Range

Thermal Data

Parameter

Symbol

Ratings

Unit

^oC /W

Thermal Resistance Junction-ambient³(Max)

Rthj-a

150

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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