Datasheet > SST2602

SST2602

更新时间： 2024-11-23 06:14:23

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
4页	484K
描述
N-Channel Enhancement Mode Power Mos.FET

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SST2602 数据手册

SST2602

6.3A, 20V,RDS(ON) 34m

Elektronische Bauelemente

N-Channel Enhancement Mode Power Mos.FET

RoHS Compliant Product

SOT-26

Description

0.20

0.37Ref.

The SST2602 utiltzed advance processing techniques to achieve the lowest

possible on-resistance, extermely efficient and cost-effectiveness device.

The SST2602 is universally used for all commercial-industrial applications.

0.60 Ref.

2.60

3.00

0.25

1.40

1.80

0.30

0.55

0.95 Ref.

0~0.1

2.70

3.10

1.20Ref.

10 ^o

Features

Dimensions in millimeters

* Low On-Resistance

* Capable of 2.5V Gate Drive

2 6 0 2

Date Code

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

± 12

6.3

VGS

I^D@TC=25^oC

Continuous Drain Current,V^GS@4.5V

I^D@TC=70

Pulsed Drain Current^1,2

Total Power Dissipation

I^DM

^oC

PD@TC=25

Tj, Tstg

W /^oC

^oC

Linear Derating Factor

0.016

Operating Junction and Storage Temperature Range

-55~+150

Thermal Data

Symbol

Ratings

Unit

Parameter

Thermal Resistance Junction-case³

62.5

C /W

Rthj-c

Max.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 4

12 3 4

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