Datasheet > SST25WF080B

SST25WF080B

更新时间： 2024-09-19 01:11:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
39页	726K
描述
8 Mbit 1.8V SPI Serial Flash

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SST25WF080B 数据手册

SST25WF080B

8 Mbit 1.8V SPI Serial Flash

Features

Product Description

• Single Voltage Read and Write Operations

- 1.65-1.95V

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with proprietary, high-performance CMOS SuperFlash

technology. The split-gate cell design and thick-oxide

tunneling injector attain better reliability and manufac-

turability compared with alternate approaches.

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High Speed Clock Frequency

- 40MHz

• Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

• Superior Reliability

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

• Ultra-Low Power Consumption:

- Active Read Current: 4 mA (typical)

- Standby Current: 10 μA (typical)

- Power-down Mode Standby Current: 4 μA (typical)

• Flexible Erase Capability

SST25WF080B is offered in 8-lead SOIC and 8-contact

USON packages. See Figure 2-1 for the pin assign-

ments.

- Uniform 4 KByte sectors

- Uniform 64 KByte overlay blocks

• Page Program Mode

- 256 Bytes/Page

• Fast Erase and Page-Program:

- Chip-Erase Time: 500 ms (typical)

- Sector-Erase Time: 40 ms (typical)

- Block-Erase Time: 80 ms (typical)

- Page-Program Time: 0.8 ms/ 256 bytes (typical)

• End-of-Write Detection

- Software polling the BUSY bit in Status Register

• Hold Pin (HOLD#)

- Suspend a serial sequence without deselect-

ing the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the status register

• Software Write Protection

- Write protection through Block-Protection bits

in status register

• Temperature Range

- Industrial: -40°C to +85°C

• Packages Available

- 8-lead SOIC (150 mils)

- 8-contact USON (2mm x 3mm)

• All devices are RoHS compliant

 2014 Microchip Technology Inc.

DS20005164C-page 1

12 3 4 5 6 7...39

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与SST25WF080B相关器件

型号	品牌	获取价格	描述	数据表
SST25WF080B-40I/SN	MICROCHIP	获取价格	8 Mbit 1.8V SPI Serial Flash
SST25WF080BT-40E/SN	MICROCHIP	获取价格	Flash
SST25WF080BT-40I/NP	MICROCHIP	获取价格	8 Mbit 1.8V SPI Serial Flash
SST25WF080BT-40I/SN	MICROCHIP	获取价格	FLASH 1.8V PROM
SST25WF512	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit 1.8V SPI Serial Flash
SST25WF512_10	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
SST25WF512-40-4I-SAF	MICROCHIP	获取价格	512K X 1 FLASH 1.8V PROM, PDSO8, 0.150 INCH, SOIC-8
SST25WF512-40-5I-QAE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
SST25WF512-40-5I-QAF	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
SST25WF512-40-5I-SAE	SST	获取价格	512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash

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